summary v (br)dss = 20v; r ds(on) = 0.12 i d = 2.2a description this new generation of trench mosfets from ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23 package applications ? dc - dc converters ? power management functions ? disconnect switches ? motor control device marking ? 7n2 ZXMN2A01F 20v n-channel enhancement mode mosfet device reel size tape width quantity per reel ZXMN2A01Fta 7? 8mm 3000 units ZXMN2A01Ftc 13? 8mm 10000 units ordering information top view pinout sot23 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
ZXMN2A01F parameter symbol value unit junction to ambient (a) r ja 200 c/w junction to ambient (b) r ja 155 c/w notes : (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. thermal resistance parameter symbol limit unit drain-source voltage v dss 20 v gate-source voltage v gs 12 v continuous drain current v gs =10v; t a =25c (b) v gs =10v; t a =70c (b) v gs =10v; t a =25c (a) i d 2.2 1.7 1.9 a pulsed drain current (c) i dm 8a continuous source current (body diode) (b) i s 1.29 a pulsed source current (body diode) (c) i sm 8a power dissipation at t a =25c (a) linear derating factor p d 625 5 mw mw/c power dissipation at t a =25c (b) linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
ZXMN2A01F parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 20 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 a v ds =20v, v gs =0v gate-body leakage i gss 100 na v gs = 12v, v ds =0v gate-source threshold voltage v gs(th) 0.7 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.12 0.225 ? ? v gs =4.5v, i d =4a v gs =2.5v, i d =1.5a forward transconductance (1)(3) g fs 6.1 s v ds =10v,i d =4a dynamic (3) input capacitance c iss 303 pf v ds =15 v, v gs =0v, f=1mhz output capacitance c oss 59 pf reverse transfer capacitance c rss 30 pf switching (2) (3) turn-on delay time t d(on) 2.49 ns v dd =10v, i d =4a r g =6.0 ? ,v gs =5v rise time t r 5.21 ns turn-off delay time t d(off) 7.47 ns fall time t f 4.62 ns total gate charge q g 3.0 nc v ds =10v,v gs =4.5v, i d =4a gate-source charge q gs 0.8 nc gate-drain charge q gd 1.0 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =3.2a, v gs =0v reverse recovery time (3) t rr 23 ns t j =25c, i f =4a, di/dt= 100a/ s reverserecoverycharge(3) q rr 5.65 nc electrical characteristics (at t a = 25c unless otherwise stated) notes: (1) measured under pulsed conditions. width = 300 s. duty cycle 2%. (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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